Parameter
Symbol
CDBD
CDBD
1020-G
1030-G
CDBD
10200-G
Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Maximum forward voltage
I
F=10.0A
Maxium Forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
current
MaximumReverse
VR=VRRM TA=25°C
VR=VRRM
TA=100°C
Page 1
QW-BB033
Chip Schottky Barrier Rectifier
REV:A
Comchip Technology CO., LTD.
VRRM
VR
VRMS
IO
VF
IFSM
IR
RθJc
TJ
20
20
14
40
40
28
60
60
42
10.0
0.75
150
0.5
50
3.0
80
80
56
150
150
105
V
V
V
A
V
A
mA
°C/W
°C
0.55
1.00
Operating temperature
Storage temperature
TSTG
-65 to +175
°C
-55 to +125
-55 to +150
Dimensions
in
inches
and
(
millimeters)
D2PAK
Reverse V
oltage: 20 to 200 Volts
Forward Current: 10.0
Amp
RoHS Device
CDBD1020-G Thru. CDBD10200-G
1040-G
CDBD
1050-G
1060-G
CDBD
CDBD
1080-G
10100-G
CDBD
10150-G
CDBD
50
50
35
J
unction
t
o
C
ase
0.402(10.20)
0.386( 9.80)
0.192(4.8)
0.176(4.4)
0.370(9.40)
0.354(9.00)
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.40)
0.024(0.60)
0.016(0.40)
0.055(1.40)
0.047(1.20)
0.185(4.70)
0.169(4.30)
0.012(0.30)
0.004(0.10)
0.108(2.70)
0.092(2.30)
0.046(1.20)
0.032(0.80)
30
30
21
100
100
70
CDBD
200
200
140
0.85
IR
mA
2
1
3
Maximum Forward rectified current
(See fig. 1)
Typ.Thermal
resistance
Features
-Batch
process
design, excellent
power
dissipation
offers
better
reverse
leakage current
and
thermal
resistance.
-Low
profile
surface
mounted
application
in
order
to
optimize
board
space.
-Low
power
loss, high
efficiency.
-High
current
capability, low
forward
voltage
drop.
-High
surge
capability.
-Guarding
for
overvoltage
protection.
-Ultra
high-speed
switching.
-Silicon
epitaxial
planar
chip, metal
silicon
junction.
-Lead-free
part meets
environmental
standards
of
MIL-STD-19500 /228
Mechanical data
-Case: TO-263/D2PAK, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight:1.70 gram(approx.).
-Weunting Position: Any
PIN
1
PIN
3
PIN
2
Maximum Ratings
(At Ta=25°C, unless otherwise noted)
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